Rapid thermal annealing furnaces have a wide range of applications, including annealing for silicon and compound semiconductor wafers (RTA), rapid thermal oxidation (RTO), rapid thermal nitriding (RTN), rapid thermal diffusion from a spin-on dopant, crystallization, and contact alloying.
RTP Series
High Speed Heat Treatment System
The RTP oven is a durable and efficient heat treatment system that features a unique lamp arrangement with upper and lower cross lamp arrays. The process cycles are extremely short due to the rapid attainment of a vacuum of 10exp.-3 hPa. An optional HV configuration is available for achieving a vacuum of up to 10exp.-6.
Model RTP series
Front Loading
RTP 100: 4'' Diameter / Max 1200℃
RTP 100-HV: Vacuum up to 10E-6 hPa
RTP 150: 6'' Diameter / Max 1000℃
RTP 150-HV: Vacuum up to 10E-6 hPa
RTP 150-EP: Ramp up 150 K/sec
Heating & Cooling
RTP 100:
Max temperature is 1200℃
Ramp up 150 K/sec - Ramp-down 200 K/min
RTP 150:
Max temperature is 1000℃
Ramp up 75 K/sec - Ramp-down 200 K/min
Chamber cooling by external water system
Wafer cooling by Nitrogen Gas
Applications
Implantation / Contact Annealing
RTP - RTA- RTO- RTN
SiAu, SiAl, SiMo Alloying
Low k dielectric
Crystallization & Densification
Si-Solar Wafer cells on glass
Features
Excellent temperature uniformity
UP to 4 gas lines (MFC)
Heated by 2 x 24 IR Infrared Lamps (21 kW)
Integrated data logging
Quartz glass universal holder
Flow controller for 5nlmVacuum up to .001 hPa
SPS 50 programs with 50 steps each
VPO-300
High temperature Vacuum Process Oven
12'' Wafer Diameter & 12'' x12'' Substrates
The temperature distribution tool provides outstanding and unparalleled temperature uniformity resulting in process repeatability. The process cycles are extremely short due to fast reaching of vacuum up to 10exp.-3 hPa (Optional up to 10exp.-6 hPa)
Model VPO-1000-300
Automatic Vertical Open / Close
Max 1000℃ / Optional 1200℃
New VPO-1000-300-HV
Vacuum up to 10E-6 hPa
Heating & Cooling
Max temperature 1000℃
Fast ramp up 40 K/sec
Fast ramp-down 200 K/min
Chamber cooling by external water system
Wafer cooling by Nitrogen Gas
Features
Excellent temperature uniformity
UP to 4 gas lines (MFC)
Heated by 48 IR Infrared Lamps (42 kW)Top & Bottom (selection by SW)
PID controller
Integrated data logging
Quartz glass universal holderVertical
Automatic open / close chamber
Flow controller for 5nlmVacuum up to .001 hPa
Applications
Implantation / Contact Annealing
RTP - RTA- RTO- RTN
SiAu, SiAl, SiMo Alloying
Operation with inert gases, Oxygen, Hydrogen, Forming gas.
Low k dielectrica
Crystallization & Densification
Si-Solar Wafer cells on glass
